
.H 1 "Preliminary Target Specification for a 16K x 4 12 nS SRAM"

This is a second pass target specification for a 16K x 4 12 nS SRAM.
The package is assumed to be a 24 pin SOJ.

Changes from the first pass specification have been noted.  Specifications
have been added for access time penalty for larger loads.  Input capacitance
specifications have been expanded.  The specifications for the input wave forms
have been modified.


.DS
DC OPERATING CONDITIONS
.TS
tab (/) allbox;
lccccc.
Symbol/Parameter/Min/Max/Units/Notes
_
VCC/Supply Voltage/4.75/5.25/V
TEMP/Ambient Temperature/0/70/C
VIH/Input High Level/2.2/VCC+0.5/V/2
VIL/Input Low Level/-0.5/0.8/V/1
.TE

Note 1: VIL = -3.0 Volts for pulse widths less than 10 nS.

Note 2: This specification was relaxed.
.DE


.DS
DC ELECTRICAL CHARACTERISTICS
.TS
tab (/) box;
l|c|c|c|c|c|c.
Symbol/Parameter/Conditions/Min/Max/Units/Notes
=
ILI/Input Leakage Current/VCC=Max./-/10/uA
_
ILO/Output Leakage Current/VCC=Max./-/10/uA/
_
VOL/Output Low Voltage/IOL = 8 mA/-/0.4/V
_
//IOH = -100 uA/2.9/ /V/1
VOH/Output High Voltage/_/_/_/_/_
//IOH = -4 mA/2.4/ /V
.TE

Note 1: This parameter is specified but does not have to be 100% tested. 
.DE


.DS
POWER
.TS
tab (/) allbox;
l|c|c|c|c|c|c.
Symbol/Parameter/Conditions/Min/Max/Units/Notes
-
ICC1/Supply Power/f=50 MHz/-/120/mA/1,2
ICC2/Supply Power/f=0/-/90/mA/1
.TE

Note 1: Maximum power is measured with the chip enabled, VCC=5.25, and the
outputs open.

Note 2: This specification has been relaxed.  Power has been increased and the
        frequency has been lowered.
.DE


.DS
AC ELECTRICAL CHARACTERISTICS
.TS
tab (/) allbox;
lccccc
lscccc
lccccc.
Symbol/Parameter/Min/Max/Units/Notes
Read Cycle/ / / / 
_
tRC/Read Cycle Time/12/-/ns
tAA/Address Access Time/-/12/ns
tACS/Chip Select Access Time/-/12/ns
tCLZ/Chip Select to Output in Low Z/3/-/ns/1
tOE/Output Enable to Output Valid/-/12/ns/
tOLZ/Output Enable to Output in Low Z/3/-/ns/1
tCHZ/Chip Select to Output in High Z/-/8/ns/1
tOHZ/Output Disable to Output High Z/-/8/ns/1
tOH/Output Hold After Add. Change/3/-/ns/1
.TE

Note 1: This specification has been relaxed.
.DE


.DS
AC ELECTRICAL CHARACTERISTICS
.TS
tab (/) allbox;
lccccc
lscccc
lccccc.
Symbol/Parameter/Min/Max/Units/Notes
Write Cycle/ / / / 
_
tWC/Write Cycle Time/12/-/ns
tCW/Chip Select to End of Write/12/-/ns
tAW/Address Valid to End of Write/12/-/ns
tAS/Address Set-up Time/0/-/ns/1
tWP/Write Pulse Width/10/-/ns
tWR/Write Recovery Time/1/-/ns/2
tWHZ/Write Enable to Output in High Z/-/8/ns/2
tDW/Data Valid to End of Write/9/-/ns/2
tDH/Data Hold Time/0/-/ns
tOW/Output Active from End of Write/3/-/ns/2,3
.TE

Note 1: This specification is not critical for the current products and can be
        relaxed if needed.  This should be done with caution because it may
        be a critical specification for future products.

Note 2: This specification has been relaxed.

Note 3: When a write cycle is ended with WE, the data driven by the SRAM must
        be the same data that was just written.  This assumes that the address
        does not change.  This is necessary to prevent a drive fight between
        the SRAM and the controller.
.DE


.DS
CAPACITANCE
.TS
tab (/) allbox;
lccccc.
Symbol/Pins/Min/Max/Units/Notes
_
Cin/Input - 3-9, 19-22/1/3.5/pF
Cin/Input - 1, 2, 10, 11, 13, 23/1.5/4.5/pF/1
Cout/I/O - 14, 15, 16, 17/0/7/pF/1
.TE

Note 1: This specification has been relaxed.
.DE


Input Signals:

AC electrical specifications are guaranteed with input signals that change
between .8 and 2.4 volts with a rise/fall time of less than or equal to 4 ns.
Both input and outputs are measured from 1.5 volts.  Signal are not required
to change monotonically.


Output Loads:

Specifications are guaranteed with the three output loads shown on the following
page.

Load 3 is used for tOH, tHZ, tLZ, tWZ, and tOW.

All other AC specifications are guaranteed with load 1 except for the access
time penalties listed below.

.DS
LOAD ACCESS PENALTIES
.TS
tab (/) allbox;
ccccc.
R1/R2/C/Penalty/Notes
_
480 Ohms/255 Ohms/30 pF/0 nS
Open/Open/30 pF/1 nS
Open/Open/60 pF/2 nS
Open/1 KOhm/60 pF/1.5 nS
.TE
.DE

